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| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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Texas Instruments | MOSFET N-CH 80V 100A TO220 | NexFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | 217W (Tc) | N-Channel | - | 80V | 100A (Ta) | 6.6 mOhm @ 60A, 10V | 3.2V @ 250µA | 50nC @ 10V | 3980pF @ 40V | 6V, 10V | ±20V |
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