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| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
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Texas Instruments | MOSFET P-CH 20V 4A 9DSBGA | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 9-UFBGA, DSBGA | 9-DSBGA | 500mW (Ta) | P-Channel | - | 20V | 4A (Ta) | 26 mOhm @ 2A, 4.5V | 1.05V @ 250µA | 7.5nC @ 4.5V | 1010pF @ 10V | 1.8V, 4.5V | -6V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,029
Сегодня корабль + бесплатная ночная доставка
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Texas Instruments | MOSFET P-CH 20V 4A 9DSBGA | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 9-UFBGA, DSBGA | 9-DSBGA | 500mW (Ta) | P-Channel | - | 20V | 4A (Ta) | 26 mOhm @ 2A, 4.5V | 1.05V @ 250µA | 7.5nC @ 4.5V | 1010pF @ 10V | 1.8V, 4.5V | -6V |
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