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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
CSD22204WT
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
2,839
Сегодня корабль + бесплатная ночная доставка
Texas Instruments MOSFET P-CH 8V 9DSBGA NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-UFBGA, DSBGA 9-DSBGA 1.7W (Ta) P-Channel - 8V 5A (Ta) 9.9 mOhm @ 2A, 4.5V 950mV @ 250µA 24.6nC @ 4.5V 1130pF @ 4V 2.5V, 4.5V -6V
CSD22206WT
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
3,492
Сегодня корабль + бесплатная ночная доставка
Texas Instruments MOSFET P-CHANNEL 8V 5A 9-DSBGA NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-UFBGA, DSBGA 9-DSBGA (1.5x1.5) 1.7W (Ta) P-Channel - 8V 5A (Ta) 5.7 mOhm @ 2A, 4.5V 1.05V @ 250µA 14.6nC @ 4.5V 2275pF @ 4V 2.5V, 4.5V -6V