Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 продукты
ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
CSD17301Q5A
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2,340
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Texas Instruments MOSFET N-CH 30V 28A 8SON NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSONP (5x6) 3.2W (Ta) N-Channel - 30V 28A (Ta), 100A (Tc) 2.6 mOhm @ 25A, 8V 1.55V @ 250µA 25nC @ 4.5V 3480pF @ 15V 3V, 8V +10V, -8V
CSD16403Q5A
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
2,201
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Texas Instruments MOSFET N-CH 25V 100A 8-SON NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSONP (5x6) 3.1W (Ta) N-Channel - 25V 28A (Ta), 100A (Tc) 2.8 mOhm @ 20A, 10V 1.9V @ 250µA 18nC @ 4.5V 2660pF @ 12.5V 4.5V, 10V +16V, -12V