- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,801
Сегодня корабль + бесплатная ночная доставка
|
Texas Instruments | MOSFET N-CH 100V TO-220 | NexFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | 300W (Tc) | N-Channel | - | 100V | 150A (Ta) | 3.6 mOhm @ 100A, 10V | 3.4V @ 250µA | 101nC @ 10V | 7930pF @ 50V | 6V, 10V | ±20V | |||
|
|
|
1,453
Сегодня корабль + бесплатная ночная доставка
|
Texas Instruments | MOSFET N-CH 80V 150A TO-220 | NexFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | 300W (Tc) | N-Channel | - | 80V | 150A (Ta) | 3.8 mOhm @ 100A, 6V | 3.2V @ 250µA | 76nC @ 10V | 7820pF @ 40V | 6V, 10V | ±20V | |||
|
|
|
1,262
Сегодня корабль + бесплатная ночная доставка
|
Texas Instruments | MOSFET N-CH 100V TO-220 | NexFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | 375W (Tc) | N-Channel | - | 100V | 150A (Ta) | 2.7 mOhm @ 100A, 10V | 3.2V @ 250µA | 153nC @ 10V | 12000pF @ 50V | 6V, 10V | ±20V |
Страница 1 / 1
