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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
CSD18536KTTT
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
1,916
Сегодня корабль + бесплатная ночная доставка
Texas Instruments MOSFET N-CH 60V 200A D2PAK NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA DDPAK/TO-263-3 375W (Tc) N-Channel - 60V 200A (Ta), 349A (Tc) 1.6 mOhm @ 100A, 10V 2.2V @ 250µA 140nC @ 10V 11430pF @ 30V 4.5V, 10V ±20V
CSD18536KTTT
За единицу
$5.43
RFQ
629
Сегодня корабль + бесплатная ночная доставка
Texas Instruments MOSFET N-CH 60V 200A D2PAK NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA DDPAK/TO-263-3 375W (Tc) N-Channel - 60V 200A (Ta), 349A (Tc) 1.6 mOhm @ 100A, 10V 2.2V @ 250µA 140nC @ 10V 11430pF @ 30V 4.5V, 10V ±20V