Gate Charge (Qg) (Max) @ Vgs :
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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
CSD17484F4
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2,697
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Texas Instruments MOSFET N-CH 30V 3A 3-PICOSTAR FemtoFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN 3-PICOSTAR 500mW (Ta) N-Channel - 30V 3A (Ta) 121 mOhm @ 500mA, 8V 1.1V @ 250µA 1.2nC @ 4.5V 195pF @ 15V 1.8V, 8V 12V
CSD17484F4T
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2,188
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Texas Instruments MOSFET N-CH 30V 1.5A 3PICOSTAR FemtoFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN 3-PICOSTAR 500mW (Ta) N-Channel - 30V 3A (Ta) 121 mOhm @ 500mA, 8V 1.1V @ 250µA 0.2nC @ 8V 195pF @ 15V 1.8V, 8V 12V