- Packaging :
3 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
3,310
Сегодня корабль + бесплатная ночная доставка
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Texas Instruments | MOSFET P-CH 20V 3.2A 6DSBGA | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 6-DSBGA (1x1.5) | 1W (Ta) | P-Channel | - | 20V | 3.2A (Ta) | 33 mOhm @ 1.5A, 4.5V | 1.1V @ 250µA | 4.1nC @ 4.5V | 570pF @ 10V | 2.5V, 4.5V | -6V | ||
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3,442
Сегодня корабль + бесплатная ночная доставка
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Texas Instruments | MOSFET P-CH 20V 3.2A 6DSBGA | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 6-DSBGA (1x1.5) | 1W (Ta) | P-Channel | - | 20V | 3.2A (Ta) | 33 mOhm @ 1.5A, 4.5V | 1.1V @ 250µA | 4.1nC @ 4.5V | 570pF @ 10V | 2.5V, 4.5V | -6V | |||
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2,143
Сегодня корабль + бесплатная ночная доставка
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Texas Instruments | MOSFET P-CH 20V 3.2A 6DSBGA | NexFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 6-DSBGA (1x1.5) | 1W (Ta) | P-Channel | - | 20V | 3.2A (Ta) | 33 mOhm @ 1.5A, 4.5V | 1.1V @ 250µA | 4.1nC @ 4.5V | 570pF @ 10V | 2.5V, 4.5V | -6V |
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