Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FA57SA50LC
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
3,094
Сегодня корабль + бесплатная ночная доставка
Vishay Semiconductor Diodes Division MOSFET N-CH 500V 57A SOT-227 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 625W (Tc) N-Channel 500V 57A (Tc) 80 mOhm @ 34A, 10V 4V @ 250µA 338nC @ 10V 10000pF @ 25V 10V ±20V
VS-FA72SA50LC
За единицу
$26.50
RFQ
3,865
Сегодня корабль + бесплатная ночная доставка
Vishay Semiconductor Diodes Division MOSFET N-CH 500V 72A SOT-227 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 1136W (Tc) N-Channel 500V 72A (Tc) 80 mOhm @ 34A, 10V 4V @ 250µA 338nC @ 10V 10000pF @ 25V 10V ±20V