Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
VS-FC220SA20
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$33.31
RFQ
3,730
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Vishay Semiconductor Diodes Division MOSFET N-CH 200V 220A SOT-227 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 789W (Tc) N-Channel 200V 220A (Tc) 7 mOhm @ 150A, 10V 5.1V @ 500µA 350nC @ 10V 21000pF @ 50V 10V ±30V
VS-FC80NA20
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$26.01
RFQ
3,624
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Vishay Semiconductor Diodes Division MOSFET N-CH 200V 108A - Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 405W (Tc) N-Channel 200V 108A (Tc) 14 mOhm @ 80A, 10V 5.5V @ 250µA 161nC @ 10V 10720pF @ 50V 10V ±30V