4 продукты
ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRL6342PBF
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
2,694
Сегодня корабль + бесплатная ночная доставка
Infineon Technologies MOSFET N-CH 30V 9.9A 8SOIC HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 9.9A (Ta) 14.6 mOhm @ 9.9A, 4.5V 1.1V @ 10µA 11nC @ 4.5V 1025pF @ 25V 2.5V, 4.5V ±12V
IRL6342TRPBF
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
2,056
Сегодня корабль + бесплатная ночная доставка
Infineon Technologies MOSFET N-CH 30V 9.9A 8SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 9.9A (Ta) 14.6 mOhm @ 9.9A, 4.5V 1.1V @ 10µA 11nC @ 4.5V 1025pF @ 25V 2.5V, 4.5V ±12V
IRL6342TRPBF
За единицу
$0.69
RFQ
3,349
Сегодня корабль + бесплатная ночная доставка
Infineon Technologies MOSFET N-CH 30V 9.9A 8SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 9.9A (Ta) 14.6 mOhm @ 9.9A, 4.5V 1.1V @ 10µA 11nC @ 4.5V 1025pF @ 25V 2.5V, 4.5V ±12V
IRL6342TRPBF
За единицу
$0.22
RFQ
1,753
Сегодня корабль + бесплатная ночная доставка
Infineon Technologies MOSFET N-CH 30V 9.9A 8SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 9.9A (Ta) 14.6 mOhm @ 9.9A, 4.5V 1.1V @ 10µA 11nC @ 4.5V 1025pF @ 25V 2.5V, 4.5V ±12V