- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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625
Сегодня корабль + бесплатная ночная доставка
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IXYS | MOSFET N-CH 200V 120A TO-264AA | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 560W (Tc) | N-Channel | - | 200V | 120A (Tc) | 17 mOhm @ 60A, 10V | 4V @ 8mA | 300nC @ 10V | 9100pF @ 25V | 10V | ±20V | |||
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1,455
Сегодня корабль + бесплатная ночная доставка
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IXYS | MOSFET N-CH 250V 120A TO-264 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 560W (Tc) | N-Channel | - | 250V | 120A (Tc) | 22 mOhm @ 500mA, 10V | 4V @ 8mA | 400nC @ 10V | 9400pF @ 25V | 10V | ±20V | |||
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1,061
Сегодня корабль + бесплатная ночная доставка
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IXYS | MOSFET N-CH 650V 120A TO-264 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 | 1250W (Tc) | N-Channel | - | 650V | 120A (Tc) | 24 mOhm @ 60A, 10V | 5.5V @ 8mA | 225nC @ 10V | 15500pF @ 25V | 10V | ±30V |
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