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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TSM1NB60SCT A3G
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
3,157
Сегодня корабль + бесплатная ночная доставка
Taiwan Semiconductor Corporation MOSFET N-CH 600V 500MA TO92 - Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92 2.5W (Tc) N-Channel 600V 500mA (Tc) 10 Ohm @ 250mA, 10V 4.5V @ 250µA 6.1nC @ 10V 138pF @ 25V 10V ±30V
TSM1NB60SCT A3G
За единицу
$0.12
RFQ
3,692
Сегодня корабль + бесплатная ночная доставка
Taiwan Semiconductor Corporation MOSFET N-CH 600V 500MA TO92 - Last Time Buy Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92 2.5W (Tc) N-Channel 600V 500mA (Tc) 10 Ohm @ 250mA, 10V 4.5V @ 250µA 6.1nC @ 10V 138pF @ 25V 10V ±30V