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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BS108/01,126
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
2,751
Сегодня корабль + бесплатная ночная доставка
NXP USA Inc. MOSFET N-CH 200V 300MA SOT54 - Obsolete Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 1W (Ta) N-Channel 200V 300mA (Ta) 5 Ohm @ 100mA, 2.8V 1.8V @ 1mA 120pF @ 25V 2.8V ±20V
BS108,126
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
1,415
Сегодня корабль + бесплатная ночная доставка
NXP USA Inc. MOSFET N-CH 200V 300MA SOT54 - Obsolete Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 1W (Ta) N-Channel 200V 300mA (Ta) 5 Ohm @ 100mA, 2.8V 1.8V @ 1mA 120pF @ 25V 2.8V ±20V