4 продукты
ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDI150N10
За единицу
$2.03
RFQ
1,163
Сегодня корабль + бесплатная ночная доставка
ON Semiconductor MOSFET N-CH 100V 57A I2PAK PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 110W (Tc) N-Channel - 100V 57A (Tc) 16 mOhm @ 49A, 10V 4.5V @ 250µA 69nC @ 10V 4760pF @ 25V 10V ±20V
FDI030N06
За единицу
$5.17
RFQ
2,100
Сегодня корабль + бесплатная ночная доставка
ON Semiconductor MOSFET N-CH 60V 120A I2PAK PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 231W (Tc) N-Channel - 60V 120A (Tc) 3.2 mOhm @ 75A, 10V 4.5V @ 250µA 151nC @ 10V 9815pF @ 25V 10V ±20V
FDI045N10A-F102
За единицу
$4.34
RFQ
810
Сегодня корабль + бесплатная ночная доставка
ON Semiconductor MOSFET N-CH 100V 120A I2PAK-3 PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 263W (Tc) N-Channel - 100V 120A (Tc) 4.5 mOhm @ 100A, 10V 4V @ 250µA 74nC @ 10V 5270pF @ 50V 10V ±20V
FDI038AN06A0
За единицу
$4.32
RFQ
2,365
Сегодня корабль + бесплатная ночная доставка
ON Semiconductor MOSFET N-CH 60V 80A TO-262AB PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 310W (Tc) N-Channel - 60V 17A (Ta), 80A (Tc) 3.8 mOhm @ 80A, 10V 4V @ 250µA 124nC @ 10V 6400pF @ 25V 6V, 10V ±20V