Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFT80N085
За единицу
$27.94
RFQ
827
Сегодня корабль + бесплатная ночная доставка
IXYS MOSFET N-CH 85V 80A TO-268 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 300W (Tc) N-Channel - 85V 80A (Tc) 9 mOhm @ 40A, 10V 4V @ 4mA 180nC @ 10V 4800pF @ 25V 10V ±20V
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За единицу
$10.39
RFQ
784
Сегодня корабль + бесплатная ночная доставка
IXYS MOSFET N-CH HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268HV 890W (Tc) N-Channel - 650V 80A (Tc) - 5V @ 4mA 140nC @ 10V 8300pF @ 25V 10V ±30V
IXFT80N08
За единицу
$12.48
RFQ
1,285
Сегодня корабль + бесплатная ночная доставка
IXYS MOSFET N-CH 80V 80A TO-268 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 300W (Tc) N-Channel - 80V 80A (Tc) 9 mOhm @ 40A, 10V 4V @ 4mA 180nC @ 10V 4800pF @ 25V 10V ±20V