Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
C3M0120100J
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$8.26
RFQ
927
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Cree/Wolfspeed MOSFET N-CH 1000V 22A D2PAK-7 C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 83W (Tc) N-Channel - 1000V 22A (Tc) 155 mOhm @ 15A, 15V 3.5V @ 3mA 21.5nC @ 15V 350pF @ 600V 15V +15V, -4V
C3M0065100J
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$11.49
RFQ
1,119
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Cree/Wolfspeed MOSFET N-CH 1000V 35A D2PAK-7 C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 113.5W (Tc) N-Channel - 1000V 35A (Tc) 78 mOhm @ 20A, 15V 3.5V @ 5mA 35nC @ 15V 660pF @ 600V 15V +15V, -4V