- Производство :
- Series :
- Packaging :
- Technology :
- Operating Temperature :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
9 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
858
Сегодня корабль + бесплатная ночная доставка
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | ||
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3,492
Сегодня корабль + бесплатная ночная доставка
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | |||
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|
|
2,770
Сегодня корабль + бесплатная ночная доставка
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | |||
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|
ПОЛУЧИТЬ ЦИТАТЫ |
1,297
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 80V 90A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 90A (Ta) | 2.5 mOhm @ 29A, 5V | 2.5V @ 14mA | 15nC @ 5V | 1650pF @ 40V | 5V | +6V, -4V | ||
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3,286
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 80V 90A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 90A (Ta) | 2.5 mOhm @ 29A, 5V | 2.5V @ 14mA | 15nC @ 5V | 1650pF @ 40V | 5V | +6V, -4V | |||
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|
|
2,794
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 80V 90A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 90A (Ta) | 2.5 mOhm @ 29A, 5V | 2.5V @ 14mA | 15nC @ 5V | 1650pF @ 40V | 5V | +6V, -4V | |||
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|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,931
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 60V 90A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 60V | 90A (Ta) | 2.2 mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | 1780pF @ 30V | 5V | +6V, -4V | ||
|
|
|
2,337
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 60V 90A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 60V | 90A (Ta) | 2.2 mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | 1780pF @ 30V | 5V | +6V, -4V | |||
|
|
|
3,254
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 60V 90A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 60V | 90A (Ta) | 2.2 mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | 1780pF @ 30V | 5V | +6V, -4V |
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