- Производство :
- Packaging :
- Technology :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
11 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
3,091
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 350V BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (12-Solder Bar) | - | N-Channel | - | 350V | 6.3A | 65 mOhm @ 6A, 5V | 2.5V @ 1.5mA | 4.3nC @ 5V | 505pF @ 280V | 5V | +6V, -4V | ||
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3,877
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 350V BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (12-Solder Bar) | - | N-Channel | - | 350V | 6.3A | 65 mOhm @ 6A, 5V | 2.5V @ 1.5mA | 4.3nC @ 5V | 505pF @ 280V | 5V | +6V, -4V | |||
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3,464
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 350V BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (12-Solder Bar) | - | N-Channel | - | 350V | 6.3A | 65 mOhm @ 6A, 5V | 2.5V @ 1.5mA | 4.3nC @ 5V | 505pF @ 280V | 5V | +6V, -4V | |||
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3,690
Сегодня корабль + бесплатная ночная доставка
|
Sanken | MOSFET N-CH 100V 66A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 135W (Tc) | N-Channel | - | 100V | 66A (Tc) | 11.6 mOhm @ 33A, 10V | 2.5V @ 1.5mA | 88.8nC @ 10V | 6420pF @ 25V | 4.5V, 10V | ±20V | |||
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917
Сегодня корабль + бесплатная ночная доставка
|
Sanken | MOSFET N-CH 75V 85A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 135W (Tc) | N-Channel | - | 75V | 85A (Tc) | 6.6 mOhm @ 44A, 10V | 2.5V @ 1.5mA | 91nC @ 10V | 6340pF @ 25V | 4.5V, 10V | ±20V | |||
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|
3,350
Сегодня корабль + бесплатная ночная доставка
|
Sanken | MOSFET N-CH 60V 85A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 135W (Tc) | N-Channel | - | 60V | 85A (Tc) | 4.7 mOhm @ 55A, 10V | 2.5V @ 1.5mA | 90.6nC @ 10V | 6210pF @ 25V | 4.5V, 10V | ±20V | |||
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2,704
Сегодня корабль + бесплатная ночная доставка
|
Sanken | MOSFET N-CH 40V 85A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 135W (Tc) | N-Channel | - | 40V | 85A (Tc) | 3 mOhm @ 82.5A, 10V | 2.5V @ 1.5mA | 97.6nC @ 10V | 6200pF @ 25V | 4.5V, 10V | ±20V | |||
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1,158
Сегодня корабль + бесплатная ночная доставка
|
Sanken | MOSFET N-CH 30V 85A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3 | 135W (Tc) | N-Channel | - | 30V | 85A (Tc) | 2.4 mOhm @ 110A, 10V | 2.5V @ 1.5mA | 94.2nC @ 10V | 6200pF @ 15V | 4.5V, 10V | ±20V | |||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,159
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 200V 8.5A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 8.5A (Ta) | 50 mOhm @ 7A, 5V | 2.5V @ 1.5mA | 2.5nC @ 5V | 270pF @ 100V | 5V | +6V, -4V | ||
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3,004
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 200V 8.5A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 8.5A (Ta) | 50 mOhm @ 7A, 5V | 2.5V @ 1.5mA | 2.5nC @ 5V | 270pF @ 100V | 5V | +6V, -4V | |||
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2,822
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 200V 8.5A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 8.5A (Ta) | 50 mOhm @ 7A, 5V | 2.5V @ 1.5mA | 2.5nC @ 5V | 270pF @ 100V | 5V | +6V, -4V |
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