- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
3 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,796
Сегодня корабль + бесплатная ночная доставка
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IXYS | MOSFET N-CH 800V 9A TO-268 | HiPerFET™ | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 180W (Tc) | N-Channel | - | 800V | 9A (Tc) | 1.1 Ohm @ 500mA, 10V | 5V @ 2.5mA | 56nC @ 10V | 2200pF @ 25V | 10V | ±20V | |||
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1,678
Сегодня корабль + бесплатная ночная доставка
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IXYS | MOSFET N-CH 1200V 6A TO-268 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 300W (Tc) | N-Channel | - | 1200V | 6A (Tc) | 2.6 Ohm @ 3A, 10V | 5V @ 250µA | 56nC @ 10V | 1950pF @ 25V | 10V | ±20V | |||
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730
Сегодня корабль + бесплатная ночная доставка
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IXYS | MOSFET N-CH 900V 7A TO-268 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 180W (Tc) | N-Channel | - | 900V | 7A (Tc) | 1.5 Ohm @ 500mA, 10V | 5V @ 2.5mA | 56nC @ 10V | 2200pF @ 25V | 10V | ±20V |
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