- Packaging :
3 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
2,997
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STMicroelectronics | MOSFET P-CH 30V 4A POWERFLAT | DeepGATE™, STripFET™ H6 | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-PowerWDFN | PowerFlat™ (2x2) | 2.4W (Ta) | P-Channel | - | 30V | 4A (Ta) | 56 mOhm @ 2A, 10V | 2.5V @ 250µA | 6nC @ 4.5V | 639pF @ 25V | 4.5V, 10V | ±20V | ||
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3,088
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STMicroelectronics | MOSFET P-CH 30V 4A POWERFLAT | DeepGATE™, STripFET™ H6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-PowerWDFN | PowerFlat™ (2x2) | 2.4W (Ta) | P-Channel | - | 30V | 4A (Ta) | 56 mOhm @ 2A, 10V | 2.5V @ 250µA | 6nC @ 4.5V | 639pF @ 25V | 4.5V, 10V | ±20V | |||
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1,681
Сегодня корабль + бесплатная ночная доставка
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STMicroelectronics | MOSFET P-CH 30V 4A POWERFLAT | DeepGATE™, STripFET™ H6 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-PowerWDFN | PowerFlat™ (2x2) | 2.4W (Ta) | P-Channel | - | 30V | 4A (Ta) | 56 mOhm @ 2A, 10V | 2.5V @ 250µA | 6nC @ 4.5V | 639pF @ 25V | 4.5V, 10V | ±20V |
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