- Package / Case :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,176
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 25V 44A 8PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 3.5W (Ta), 125W (Tc) | N-Channel | - | 25V | 44A (Ta) | 1.1 mOhm @ 50A, 10V | 2.1V @ 100µA | 77nC @ 10V | 4812pF @ 13V | 4.5V, 10V | ±20V | |||
|
|
3,840
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 25V 45A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 160W (Tc) | N-Channel | - | 25V | 45A (Ta), 100A (Tc) | 1.15 mOhm @ 50A, 10V | 2.35V @ 150µA | 110nC @ 10V | 7174pF @ 13V | 4.5V, 10V | ±20V |
Страница 1 / 1
