- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,901
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 25V 19A DIRECTFET-SQ | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SQ | DIRECTFET™ SQ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 25V | 19A (Ta), 84A (Tc) | 3.8 mOhm @ 19A, 10V | 2.35V @ 25µA | 20nC @ 4.5V | 1810pF @ 13V | 4.5V, 10V | ±20V | |||
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1,802
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 25V 17A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SQ | DIRECTFET™ SQ | 2.2W (Ta), 36W (Tc) | N-Channel | - | 25V | 17A (Ta), 68A (Tc) | 4.9 mOhm @ 17A, 10V | 2.4V @ 50µA | 18nC @ 4.5V | 1570pF @ 13V | 4.5V, 10V | ±20V | |||
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2,224
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N CH 25V 19A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SQ | DIRECTFET™ SQ | 2.1W (Ta), 32W (Tc) | N-Channel | - | 25V | 19A (Ta), 74A (Tc) | 3.7 mOhm @ 19A, 10V | 2.1V @ 35µA | 17nC @ 4.5V | 1590pF @ 13V | 4.5V, 10V | ±16V |
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