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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
1,268
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Renesas Electronics America MOSFET N-CH 55V 90A TO-220 - Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak TO-262 1.8W (Ta), 147W (Tc) N-Channel 55V 90A (Tc) 4.4 mOhm @ 45A, 10V 4V @ 250µA 102nC @ 10V 6000pF @ 25V 10V ±20V
NP89N055MUK-S18-AY
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
652
Сегодня корабль + бесплатная ночная доставка
Renesas Electronics America MOSFET N-CH 55V 90A TO-220 - Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 TO-220-3 1.8W (Ta), 147W (Tc) N-Channel 55V 90A (Tc) 4.4 mOhm @ 45A, 10V 4V @ 250µA 102nC @ 10V 6000pF @ 25V 10V ±20V