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| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,621
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 98A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 59A, 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | 10V | ±20V | |||
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1,106
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 110A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 59A, 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | 10V | ±20V |
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