- Mounting Type :
- Supplier Device Package :
4 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,144
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Infineon Technologies | MOSFET N-CH 55V 30A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 120W (Tc) | N-Channel | - | 55V | 30A (Tc) | 14 mOhm @ 30A, 10V | 3V @ 250µA | 92nC @ 10V | 1870pF @ 25V | 5V, 10V | ±16V | |||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,320
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Infineon Technologies | MOSFET N-CH 55V 30A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 120W (Tc) | N-Channel | - | 55V | 30A (Tc) | 14 mOhm @ 30A, 10V | 3V @ 250µA | 92nC @ 10V | 1870pF @ 25V | 5V, 10V | ±16V | ||
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3,847
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 30A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 120W (Tc) | N-Channel | - | 55V | 30A (Tc) | 14 mOhm @ 30A, 10V | 3V @ 250µA | 92nC @ 10V | 1870pF @ 25V | 5V, 10V | ±16V | |||
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1,706
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 30A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 120W (Tc) | N-Channel | - | 55V | 30A (Tc) | 14 mOhm @ 30A, 10V | 3V @ 250µA | 92nC @ 10V | 1870pF @ 25V | 5V, 10V | ±16V |
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