- Series :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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864
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 33A TO220-5 | TEMPFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB | PG-TO263-5-2 | 120W (Tc) | N-Channel | Temperature Sensing Diode | 55V | 33A (Tc) | 18 mOhm @ 12A, 10V | 2V @ 90µA | 90nC @ 10V | 1730pF @ 25V | 4.5V, 10V | ±20V | |||
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1,471
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 150V 33A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 170W (Tc) | N-Channel | - | 150V | 33A (Tc) | 56 mOhm @ 20A, 10V | 5.5V @ 250µA | 90nC @ 10V | 2020pF @ 25V | 10V | ±30V | |||
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2,671
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 150V 33A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.8W (Ta), 170W (Tc) | N-Channel | - | 150V | 33A (Tc) | 56 mOhm @ 20A, 10V | 5.5V @ 250µA | 90nC @ 10V | 2020pF @ 25V | 10V | ±30V |
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