- Производство :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
16 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
2,812
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET N-CH 1000V 32A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1040W (Tc) | N-Channel | - | 1000V | 32A (Tc) | 380 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | 10V | ±30V | ||
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2,284
Сегодня корабль + бесплатная ночная доставка
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Nexperia USA Inc. | MOSFET N-CH 40V 120A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 293W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2 mOhm @ 25A, 10V | 4V @ 1mA | 109.2nC @ 10V | 8500pF @ 25V | 10V | ±20V | |||
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3,337
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET N-CH 1000V 20A SOT-227 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 460W (Tc) | N-Channel | - | 1000V | 20A (Tc) | 440 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | 10V | ±30V | |||
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3,082
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET N-CH 200V 97A SOT-227 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 450W (Tc) | N-Channel | - | 200V | 97A (Tc) | 22 mOhm @ 48.5A, 10V | 4V @ 2.5mA | 290nC @ 10V | 8500pF @ 25V | 10V | ±30V | |||
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3,653
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET N-CH 200V 97A SOT-227 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 450W (Tc) | N-Channel | - | 200V | 97A (Tc) | 22 mOhm @ 48.5A, 10V | 4V @ 2.5mA | 290nC @ 10V | 8500pF @ 25V | 10V | ±30V | |||
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1,331
Сегодня корабль + бесплатная ночная доставка
|
Nexperia USA Inc. | MOSFET N-CH 40V 120A TO220AB | Automotive, AEC-Q101, TrenchMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 293W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2.3 mOhm @ 25A, 10V | 4V @ 1mA | 109.2nC @ 10V | 8500pF @ 25V | 10V | ±20V | |||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,653
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET N-CH 1000V 30A TO264 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 | 1040W (Tc) | N-Channel | - | 1000V | 30A (Tc) | 460 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | 10V | ±30V | ||
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2,178
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET N-CH 1000V 21A SOT-227 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 462W (Tc) | N-Channel | - | 1000V | 21A (Tc) | 380 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | 10V | ±30V | |||
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2,164
Сегодня корабль + бесплатная ночная доставка
|
IXYS | MOSFET N-CH 600V 90A TO-264 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 | 1100W (Tc) | N-Channel | - | 600V | 90A (Tc) | 38 mOhm @ 45A, 10V | 4.5V @ 8mA | 210nC @ 10V | 8500pF @ 25V | 10V | ±30V | |||
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687
Сегодня корабль + бесплатная ночная доставка
|
IXYS | MOSFET N-CH 600V 90A PLUS247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 1100W (Tc) | N-Channel | - | 600V | 90A (Tc) | 38 mOhm @ 45A, 10V | 4.5V @ 8mA | 210nC @ 10V | 8500pF @ 25V | 10V | ±30V | |||
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3,104
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET N-CH 1000V 32A TO264 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 | 1040W (Tc) | N-Channel | - | 1000V | 32A (Tc) | 400 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | 10V | ±30V | |||
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2,958
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET N-CH 1000V 30A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1040W (Tc) | N-Channel | - | 1000V | 30A (Tc) | 440 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | 10V | ±30V | |||
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904
Сегодня корабль + бесплатная ночная доставка
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IXYS | 60V/220A TRENCHT3 HIPERFET MOSFE | HiperFET™, TrenchT3™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 440W (Tc) | N-Channel | - | 60V | 220A (Tc) | 4 mOhm @ 100A, 10V | 4V @ 250µA | 136nC @ 10V | 8500pF @ 25V | 10V | ±20V | |||
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654
Сегодня корабль + бесплатная ночная доставка
|
IXYS | 60V/220A TRENCHT3 HIPERFET MOSFE | HiperFET™, TrenchT3™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 440W (Tc) | N-Channel | - | 60V | 220A (Tc) | 4 mOhm @ 100A, 10V | 4V @ 250µA | 136nC @ 10V | 8500pF @ 25V | 10V | ±20V | |||
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1,649
Сегодня корабль + бесплатная ночная доставка
|
IXYS | 60V/220A TRENCHT3 HIPERFET MOSFE | HiperFET™, TrenchT3™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 440W (Tc) | N-Channel | - | 60V | 220A (Tc) | 4 mOhm @ 100A, 10V | 4V @ 250µA | 136nC @ 10V | 8500pF @ 25V | 10V | ±20V | |||
_SOT226%20Pkg.jpg)
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2,470
Сегодня корабль + бесплатная ночная доставка
|
Nexperia USA Inc. | MOSFET N-CH 40V 120A I2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 293W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2.3 mOhm @ 25A, 10V | 4V @ 1mA | 109.2nC @ 10V | 8500pF @ 25V | 10V | ±20V |
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