- Производство :
- Series :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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884
Сегодня корабль + бесплатная ночная доставка
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STMicroelectronics | MOSFET N-CH 40V 80A TO-220 | STripFET™ III | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 110W (Tc) | N-Channel | - | 40V | 80A (Tc) | 6.2 mOhm @ 40A, 10V | 4V @ 250µA | 54nC @ 10V | 2200pF @ 25V | 10V | ±20V | |||
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2,777
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | MOSFET N-CH 200V 28A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 156W (Tc) | N-Channel | - | 200V | 28A (Tc) | 82 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 2200pF @ 25V | 10V | ±30V |
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