- Производство :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,172
Сегодня корабль + бесплатная ночная доставка
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Renesas Electronics America | MOSFET N-CH 30V 26A 8HVSON | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-HWSON (3.3x3.3) | 1.5W (Ta) | N-Channel | 30V | 26A (Tc) | 3.8 mOhm @ 26A, 10V | - | 51nC @ 10V | 2490pF @ 10V | 4.5V, 10V | ±20V | |||
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3,463
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | MOSFET N-CHANNEL 40V 26A 8WDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 20W (Tc) | N-Channel | 40V | 26A (Tc) | 14 mOhm @ 5A, 10V | 2.2V @ 20µA | 3.8nC @ 4.5V | 400pF @ 25V | 4.5V, 10V | ±20V |
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