Gate Charge (Qg) (Max) @ Vgs :
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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
DMS3012SFG-7
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Diodes Incorporated MOSFET N-CH 30V 12A PWRDI3333-8 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 890mW (Ta) N-Channel Schottky Diode (Body) 30V 12A (Ta) 10 mOhm @ 13.5A, 10V 2.5V @ 250µA 14.7nC @ 10V 4310pF @ 15V 4.5V, 10V ±20V
DMG7702SFG-7
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3,906
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Diodes Incorporated MOSFET N-CH 30V 12A PWRDI3333-8 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 890mW (Ta) N-Channel Schottky Diode (Body) 30V 12A (Ta) 10 mOhm @ 13.5A, 10V 2.5V @ 250µA 31.6nC @ 10V 4310pF @ 15V 4.5V, 10V ±20V
DMG7702SFG-13
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1,231
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Diodes Incorporated MOSFET N-CH 30V 12A POWERDI - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 890mW (Ta) N-Channel Schottky Diode (Body) 30V 12A (Ta) 10 mOhm @ 13.5A, 10V 2.5V @ 250µA 14.7nC @ 10V 4310pF @ 15V 4.5V, 10V ±20V
DMS3012SFG-13
За единицу
$0.21
RFQ
1,023
Сегодня корабль + бесплатная ночная доставка
Diodes Incorporated MOSFET N-CH 30V 12A POWERDI - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 890mW (Ta) N-Channel Schottky Diode (Body) 30V 12A (Ta) 10 mOhm @ 13.5A, 10V 2.5V @ 250µA 14.7nC @ 10V 4310pF @ 15V 4.5V, 10V ±20V