- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,585
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | MOSFET N-CH 30V 7.5A 8WDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 660mW (Ta), 38.5W (Tc) | N-Channel | 30V | 7.5A (Ta), 57A (Tc) | 7 mOhm @ 20A, 10V | 2.5V @ 250µA | 24nC @ 11.5V | 1755pF @ 12V | 4.5V, 11.5V | ±20V | |||
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1,059
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | MOSFET N-CH 30V 8.3A 8WDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 660mW (Ta), 46.3W (Tc) | N-Channel | 30V | 8.3A (Ta), 69A (Tc) | 5 mOhm @ 20A, 10V | 2.5V @ 250µA | 29nC @ 11.5V | 2363pF @ 12V | 4.5V, 11.5V | ±20V |
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