- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
8 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,468
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 40V 240A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | D2PAK (7-Lead) | 231W (Tc) | N-Channel | - | 40V | 240A (Tc) | 1.3 mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | 7437pF @ 25V | 10V | ±20V | |||
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1,209
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 40V 195A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 40V | 195A (Tc) | 1.8 mOhm @ 100A, 10V | 4V @ 150µA | 225nC @ 10V | 7330pF @ 25V | 10V | ±20V | |||
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2,476
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET N-CH 200V 67A D3PAK | POWER MOS V® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D3Pak | 370W (Tc) | N-Channel | - | 200V | 67A (Tc) | 38 mOhm @ 33.5A, 10V | 4V @ 1mA | 225nC @ 10V | 6120pF @ 25V | 10V | ±30V | |||
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2,611
Сегодня корабль + бесплатная ночная доставка
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Vishay Siliconix | MOSFET P-CH 20V 40A 1212-8S | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerPAK® 1212-8S (3.3x3.3) | 4.8W (Ta), 57W (Tc) | P-Channel | - | 20V | 40A (Tc) | 3.6 mOhm @ 20A, 10V | 1.1V @ 250µA | 225nC @ 10V | 6600pF @ 10V | 2.5V, 10V | ±12V | |||
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1,624
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N CH 40V 195A D2PAK-7PIN | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK (7-Lead) | 231W (Tc) | N-Channel | - | 40V | 195A (Tc) | 1.4 mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | 7437pF @ 25V | 6V, 10V | ±20V | |||
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1,387
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 40V 180A TO263-7-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 250W (Tc) | N-Channel | - | 40V | 180A (Tc) | 1.1 mOhm @ 100A, 10V | 4V @ 180µA | 225nC @ 10V | 17940pF @ 25V | 10V | ±20V | |||
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2,938
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N CH 40V 195A D2PAK | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 230W (Tc) | N-Channel | - | 40V | 195A (Tc) | 1.8 mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | 7330pF @ 25V | 6V, 10V | ±20V | |||
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1,857
Сегодня корабль + бесплатная ночная доставка
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Vishay Siliconix | MOSFET P-CH 20V 40A PPAK 1212 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerPAK® 1212-8S (3.3x3.3) | 4.8W (Ta), 57W (Tc) | P-Channel | - | 20V | 40A (Tc) | 3.6 mOhm @ 20A, 10V | 1.1V @ 250µA | 225nC @ 10V | 6600pF @ 10V | 2.5V, 10V | ±12V |
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