- Производство :
- Series :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
3 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,588
Сегодня корабль + бесплатная ночная доставка
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Vishay Siliconix | MOSFET N-CH 600V 40A TO220AB | E | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | - | 600V | 40A (Tc) | 65 mOhm @ 16A, 10V | 5V @ 250µA | 98nC @ 10V | 2700pF @ 100V | 10V | ±30V | |||
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1,327
Сегодня корабль + бесплатная ночная доставка
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STMicroelectronics | MOSFET N-CH 650V 3.2A PWRFLAT88 | MDmesh™ V | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-PowerFlat™ HV | PowerFlat™ (8x8) HV | 2.8W (Ta), 150W (Tc) | N-Channel | - | 650V | 22.5A (Tc) | 120 mOhm @ 12A, 10V | 5V @ 250µA | 62.5nC @ 10V | 2700pF @ 100V | 10V | ±25V | |||
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3,300
Сегодня корабль + бесплатная ночная доставка
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STMicroelectronics | MOSFET N-CH 650V 28A D2PAK | MDmesh™ V | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | - | 650V | 28A (Tc) | 110 mOhm @ 14A, 10V | 5V @ 250µA | 62.5nC @ 10V | 2700pF @ 100V | 10V | ±25V |
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