Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTK80N25
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$10.55
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IXYS MOSFET N-CH 250V 80A TO-264 MegaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 540W (Tc) N-Channel - 250V 80A (Tc) 33 mOhm @ 500mA, 10V 4V @ 250µA 240nC @ 10V 6000pF @ 25V 10V ±20V
IXTK102N30P
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$10.35
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3,112
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IXYS MOSFET N-CH 300V 102A TO-264 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 700W (Tc) N-Channel - 300V 102A (Tc) 33 mOhm @ 500mA, 10V 5V @ 500µA 224nC @ 10V 7500pF @ 25V 10V ±20V