- Производство :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,725
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET N-CH 800V 34A TO-264 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] | 417W (Tc) | N-Channel | - | 800V | 34A (Tc) | 145 mOhm @ 22A, 10V | 3.9V @ 2mA | 355nC @ 10V | 4510pF @ 25V | 10V | ±20V | |||
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3,208
Сегодня корабль + бесплатная ночная доставка
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IXYS | MOSFET N-CH 800V 34A TO-264AA | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 560W (Tc) | N-Channel | - | 800V | 34A (Tc) | 240 mOhm @ 17A, 10V | 5V @ 8mA | 270nC @ 10V | 7500pF @ 25V | 10V | ±20V |
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