1 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,999
Сегодня корабль + бесплатная ночная доставка
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IXYS | MOSFET N-CH 75V 520A TO-264 | GigaMOS™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 1250W (Tc) | N-Channel | - | 75V | 520A (Tc) | 2.2 mOhm @ 100A, 10V | 5V @ 8mA | 545nC @ 10V | 41000pF @ 25V | 10V | ±20V |
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