Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFB62N80Q3
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$27.32
RFQ
1,600
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IXYS MOSFET N-CH 800V 62A PLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1560W (Tc) N-Channel - 800V 62A (Tc) 140 mOhm @ 31A, 10V 6.5V @ 8mA 270nC @ 10V 13600pF @ 25V 10V ±30V
IXFK44N80Q3
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$25.89
RFQ
3,845
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IXYS MOSFET N-CH 800V 44A TO-264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 1250W (Tc) N-Channel - 800V 44A (Tc) 190 mOhm @ 22A, 10V 6.5V @ 8mA 185nC @ 10V 9840pF @ 25V 10V ±30V