Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFK66N50Q2
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RFQ
2,121
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IXYS MOSFET N-CH 500V 66A TO-264 HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 735W (Tc) N-Channel - 500V 66A (Tc) 80 mOhm @ 500mA, 10V 4.5V @ 8mA 200nC @ 10V 8400pF @ 25V 10V ±30V
IXFK60N55Q2
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$22.73
RFQ
1,881
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IXYS MOSFET N-CH 550V 60A TO-264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 735W (Tc) N-Channel - 550V 60A (Tc) 88 mOhm @ 30A, 10V 4.5V @ 8mA 200nC @ 10V 7300pF @ 25V 10V ±30V