Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFB40N110P
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$32.72
RFQ
765
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IXYS MOSFET N-CH 1100V 40A PLUS264 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1250W (Tc) N-Channel - 1100V 40A (Tc) 260 mOhm @ 20A, 10V 6.5V @ 1mA 310nC @ 10V 19000pF @ 25V 10V ±30V
IXFB30N120P
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$30.75
RFQ
2,574
Сегодня корабль + бесплатная ночная доставка
IXYS MOSFET N-CH 1200V 30A PLUS264 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1250W (Tc) N-Channel - 1200V 30A (Tc) 350 mOhm @ 500mA, 10V 6.5V @ 1mA 310nC @ 10V 22500pF @ 25V 10V ±20V