- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
2,000
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Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 105W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7.9 mOhm @ 43A, 10V | 2.2V @ 55µA | 134nC @ 10V | 6475pF @ 25V | 5V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
932
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Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 136W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5.9 mOhm @ 56A, 10V | 2.2V @ 80µA | 196nC @ 10V | 9417pF @ 25V | 5V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
652
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Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.8 mOhm @ 69A, 10V | 2.2V @ 115µA | 273nC @ 10V | 13060pF @ 25V | 5V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,429
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Infineon Technologies | MOSFET N-CH 55V 45A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 65W (Tc) | N-Channel | - | 55V | 45A (Tc) | 13.4 mOhm @ 26A, 10V | 2.2V @ 30µA | 75nC @ 10V | 3600pF @ 25V | 5V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,660
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Infineon Technologies | MOSFET N-CH 55V 25A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 50W (Tc) | N-Channel | - | 55V | 25A (Tc) | 21.6 mOhm @ 17A, 10V | 2.2V @ 20µA | 47nC @ 10V | 2260pF @ 25V | 5V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,205
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Infineon Technologies | MOSFET N-CH 55V 100A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 214W (Tc) | N-Channel | - | 55V | 100A (Tc) | 3.8 mOhm @ 80A, 10V | 2.2V @ 150µA | 362nC @ 10V | 17270pF @ 25V | 5V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,468
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 100A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 55V | 100A (Tc) | 3 mOhm @ 80A, 10V | 2.2V @ 230µA | 550nC @ 10V | 26240pF @ 25V | 5V, 10V | ±16V |
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