- Series :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
3,137
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Renesas Electronics America | MOSFET N-CH 55V 60A TO-220 | - | Active | Bulk | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 1.8W (Ta), 105W (Tc) | N-Channel | - | 55V | 60A (Tc) | 6 mOhm @ 30A, 10V | 4V @ 250µA | 63nC @ 10V | 3750pF @ 25V | 10V | ±20V | ||
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2,180
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Infineon Technologies | MOSFET N-CH 55V 51A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
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3,223
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 61A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 91W (Tc) | N-Channel | - | 55V | 61A (Tc) | 11 mOhm @ 37A, 10V | 4V @ 250µA | 64nC @ 10V | 1720pF @ 25V | 10V | ±20V | |||
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3,533
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Infineon Technologies | MOSFET N-CH 55V 140A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 330W (Tc) | N-Channel | - | 55V | 140A (Tc) | 8 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 3650pF @ 25V | 10V | ±20V | |||
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3,642
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STMicroelectronics | MOSFET N-CHANNEL 55V 80A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 | TO-220 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | - | - | 112nC @ 10V | - | 10V | - | |||
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1,496
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 160A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 300W (Tc) | N-Channel | - | 55V | 160A (Tc) | 3.3 mOhm @ 75A, 10V | 4V @ 250µA | 290nC @ 10V | 7960pF @ 25V | 10V | ±20V | |||
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3,382
Сегодня корабль + бесплатная ночная доставка
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STMicroelectronics | MOSFET N CH 55V 110A TO-220 | DeepGATE™, STripFET™ VI | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 150W (Tc) | N-Channel | - | 55V | 110A (Tc) | 5.2 mOhm @ 60A, 10V | 4V @ 250µA | 120nC @ 10V | 8350pF @ 25V | 10V | ±20V |
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