- Производство :
- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
8 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
3,639
Сегодня корабль + бесплатная ночная доставка
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NXP USA Inc. | MOSFET N-CH 55V 19A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 56W (Tc) | N-Channel | - | 55V | 19A (Tc) | 70 mOhm @ 10A, 10V | 2V @ 1mA | 9.4nC @ 5V | 650pF @ 25V | 5V, 10V | ±15V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,228
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | MOSFET N-CH 55V 19A TO-220AB | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 55W (Tc) | N-Channel | - | 55V | 19A (Tc) | 70 mOhm @ 19A, 10V | 4V @ 250µA | 24nC @ 20V | 350pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,353
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET N-CH 55V 19A TO-220AB | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 55W (Tc) | N-Channel | - | 55V | 19A (Tc) | 70 mOhm @ 19A, 10V | 4V @ 250µA | 24nC @ 20V | 350pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,584
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | MOSFET N-CH 55V 19A IPAK | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 55W (Tc) | N-Channel | - | 55V | 19A (Tc) | 70 mOhm @ 19A, 10V | 4V @ 250µA | 24nC @ 20V | 350pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,519
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 19A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 39W (Tc) | N-Channel | - | 55V | 19A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,260
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET P-CH 55V 19A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,310
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 19A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
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2,221
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET P-CH 55V 19A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V |
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