- Производство :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
9 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
795
Сегодня корабль + бесплатная ночная доставка
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NXP USA Inc. | MOSFET N-CH 55V 40A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 96W (Tc) | N-Channel | - | 55V | 40A (Tc) | 28 mOhm @ 20A, 10V | 4V @ 1mA | - | 1300pF @ 25V | 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,825
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET N-CH 55V 60A TO-262AA | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 150W (Tc) | N-Channel | - | 55V | 66A (Tc) | 16 mOhm @ 66A, 10V | 4V @ 250µA | 85nC @ 20V | 1300pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,647
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET N-CH 55V 60A TO-220AB | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | - | 55V | 66A (Tc) | 16 mOhm @ 66A, 10V | 4V @ 250µA | 85nC @ 20V | 1300pF @ 25V | 10V | ±20V | ||
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|
ПОЛУЧИТЬ ЦИТАТЫ |
1,577
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET N-CH 55V 60A TO-247 | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 145W (Tc) | N-Channel | - | 55V | 60A (Tc) | 19 mOhm @ 60A, 10V | 4V @ 250µA | 85nC @ 20V | 1300pF @ 25V | 10V | ±20V | ||
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|
ПОЛУЧИТЬ ЦИТАТЫ |
1,185
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET N-CH 55V 66A TO-220AB | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | - | 55V | 66A (Tc) | 16 mOhm @ 66A, 10V | 4V @ 250µA | 85nC @ 20V | 1300pF @ 25V | 10V | ±20V | ||
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|
ПОЛУЧИТЬ ЦИТАТЫ |
1,315
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 55V 44A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 107W (Tc) | N-Channel | - | 55V | 44A (Tc) | 27 mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | 1300pF @ 25V | 10V | ±20V | ||
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2,457
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 44A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 107W (Tc) | N-Channel | - | 55V | 44A (Tc) | 27 mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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3,177
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET N-CH 55V 60A TO-220AB | UltraFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 145W (Tc) | N-Channel | - | 55V | 60A (Tc) | 19 mOhm @ 60A, 10V | 4V @ 250µA | 85nC @ 20V | 1300pF @ 25V | 10V | ±20V | |||
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730
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 31A TO220FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 45W (Tc) | N-Channel | - | 55V | 31A (Tc) | 24 mOhm @ 17A, 10V | 4V @ 250µA | 65nC @ 10V | 1300pF @ 25V | 10V | ±20V |
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