- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
7 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
1,451
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Infineon Technologies | MOSFET N-CH 55V 28A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 68W (Tc) | N-Channel | - | 55V | 28A (Tc) | 40 mOhm @ 17A, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | 4V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,535
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 30A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 68W (Tc) | N-Channel | - | 55V | 30A (Tc) | 35 mOhm @ 16A, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | 4V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,539
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 28A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 68W (Tc) | N-Channel | - | 55V | 28A (Tc) | 40 mOhm @ 17A, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | 4V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,074
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 22A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 37W (Tc) | N-Channel | - | 55V | 22A (Tc) | 35 mOhm @ 12A, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | 4V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,195
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 55V 30A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 68W (Tc) | N-Channel | - | 55V | 30A (Tc) | 35 mOhm @ 16A, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | 4V, 10V | ±16V | ||
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629
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 22A TO220FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 37W (Tc) | N-Channel | - | 55V | 22A (Tc) | 35 mOhm @ 12A, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | 4V, 10V | ±16V | |||
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1,959
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 30A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 68W (Tc) | N-Channel | - | 55V | 30A (Tc) | 35 mOhm @ 16A, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | 4V, 10V | ±16V |
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