- Производство :
- Package / Case :
- Supplier Device Package :
- Drive Voltage (Max Rds On, Min Rds On) :
2 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
1,071
Сегодня корабль + бесплатная ночная доставка
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NXP USA Inc. | MOSFET N-CH 55V 120A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 306W (Tc) | N-Channel | - | 55V | 120A (Tc) | 3.2 mOhm @ 25A, 10V | 2.8V @ 1mA | 258nC @ 10V | 15300pF @ 25V | 4.5V, 10V | ±16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,451
Сегодня корабль + бесплатная ночная доставка
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Nexperia USA Inc. | MOSFET N-CH 55V 120A I2PAK | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 306W (Tc) | N-Channel | - | 55V | 120A (Tc) | 3.2 mOhm @ 25A, 10V | 2.8V @ 1mA | 258nC @ 10V | 15300pF @ 25V | 10V | ±16V |
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