- Series :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
3,582
Сегодня корабль + бесплатная ночная доставка
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IXYS | MOSFET N-CH 55V 160A ISOPLUS I4 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | 200W (Tc) | N-Channel | 55V | 160A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 250µA | 200nC @ 10V | 9800pF @ 25V | 10V | ±20V | |||
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ПОЛУЧИТЬ ЦИТАТЫ |
860
Сегодня корабль + бесплатная ночная доставка
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IXYS | MOSFET N-CH 55V 150A I4-PAC-5 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | - | N-Channel | 55V | 150A (Tc) | 4.9 mOhm @ 110A, 10V | 4V @ 1mA | 86nC @ 10V | - | 10V | ±20V | |||
|
ПОЛУЧИТЬ ЦИТАТЫ |
1,979
Сегодня корабль + бесплатная ночная доставка
|
IXYS | MOSFET N-CH 55V 100A I4-PAC-5 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | - | N-Channel | 55V | 100A (Tc) | 7.2 mOhm @ 80A, 10V | 4V @ 1mA | 100nC @ 10V | - | 10V | ±20V |
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