- Производство :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
888
Сегодня корабль + бесплатная ночная доставка
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NXP USA Inc. | MOSFET N-CH 55V 12A SOT223 | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 8W (Tc) | N-Channel | 55V | 12A (Tc) | 29 mOhm @ 8A, 10V | 2V @ 1mA | - | 1594pF @ 25V | 4.5V, 10V | ±10V | ||
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836
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET P-CH 55V 12A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 45W (Tc) | P-Channel | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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2,312
Сегодня корабль + бесплатная ночная доставка
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Nexperia USA Inc. | MOSFET N-CH 55V 12A SOT223 | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 8W (Tc) | N-Channel | 55V | 12A (Tc) | 29 mOhm @ 8A, 10V | 2V @ 1mA | - | 1594pF @ 25V | 4.5V, 10V | ±10V |
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