- Производство :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
2 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
1,348
Сегодня корабль + бесплатная ночная доставка
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Vishay Siliconix | MOSFET N-CH 55V 35A TO252 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 7.5W (Ta), 50W (Tc) | N-Channel | 55V | 35A (Tc) | 20 mOhm @ 20A, 10V | 1V @ 250µA (Min) | 13nC @ 5V | 885pF @ 25V | 4.5V, 10V | ±20V | ||
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3,036
Сегодня корабль + бесплатная ночная доставка
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Nexperia USA Inc. | MOSFET N-CH 55V 35A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 85W (Tc) | N-Channel | 55V | 35A (Tc) | 35 mOhm @ 20A, 10V | 4V @ 1mA | - | 872pF @ 25V | 10V | ±20V |
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