- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
3,600
Сегодня корабль + бесплатная ночная доставка
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Renesas Electronics America | MOSFET N-CH 55V 52A TO-252 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (MP-3ZK) | 1.2W (Ta), 56W (Tc) | N-Channel | - | 55V | 52A (Tc) | 14 mOhm @ 26A, 10V | 4V @ 250µA | 57nC @ 10V | 3200pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,052
Сегодня корабль + бесплатная ночная доставка
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NXP USA Inc. | MOSFET N-CH 55V 52A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 116W (Tc) | N-Channel | - | 55V | 52A (Tc) | 20 mOhm @ 25A, 5V | 2V @ 1mA | - | 2400pF @ 25V | 5V | ±10V | ||
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2,166
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET N-CH 55V 52A TO220FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 58W (Tc) | N-Channel | - | 55V | 52A (Tc) | 10 mOhm @ 28A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V |
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